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| Shenzhen SI Semiconductors Co., LTD. Product Specification MJE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST WIDE SOA MJE13001 Absolute Maximum Ratings PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature TC=25C SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 500 400 9 0.3 7 150 -65-150 TO-92 UNIT V V V A W C C Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter- Base Voltage Collector-Emitter Saturation Voltage Tc=25C SYMBOL ICBO ICEO VCEO VEBO Vces TEST CONDITION VCB=500V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.05A, ,IB=0.01A IC=0.1A,IB=0.02A IC=0.3A,IB=0.1A IC=0.1A,IB=0.02A VCE=5V,IC=1mA 8 10 8 2.0 0.8 S 40 VCE=5V,IC=20mA VCE=5V,IC=200mA VCC=250V, IC=5IB IB1= -IB2=0.04A 400 9 0.5 1.0 3.0 1.5 V V MIN MAX 100 250 UNIT A A V V Base-Emitter Saturation Voltage DC Current Gain VBES hFE tS tf Storage Time Falling Time Si semiconductors 2004.10 1 Shenzhen SI Semiconductors Co., LTD. Product Specification MJE SERIES TRANSISTORS SOA (DC) 120 100 MJE13001 % 1 Ic(A) Pc Tj 0.1 80 IS/B 60 Ptot 0.01 40 20 0.001 1 hFE 10 100 Vce(V) 0 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= - 40 10 Tj= - 40 Vce=1.5V Vce=5V 1 0.001 0.01 0.1 Ic(A) 1 1 0.001 0.01 0.1 Ic(A) 1 10 Vces(v) hFE=5 Vces - Ic 1.4 Tj=125 Vbes(v) hFE=5 Vbes - Ic Tj= - 40 Tj=25 1.2 1 0.8 0.6 1 Tj=125 Tj= - 40 Tj=25 0.1 0.4 0.2 0.01 0.01 0.1 Ic(A) 1 0 0.01 Ic(A) 0.1 1 Si semiconductors 2004.10 2 Shenzhen SI Semiconductors Co., LTD. Product Specification TO-92 MECHANICAL DATA UNIT SYMBOL A b c D D d E e e1 L L1 12.7 2.0 min 4.3 0.3 0.3 4.3 1.0 3.2 2.54 1.27 5.2 1.7 4.2 nom max 5.3 mm Si semiconductors 2004.10 3 |
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